张姗
2020-05-09 09:30  

  张姗 讲师

教育背景 博士

研究领域 半导体物理

研究方向  1.二维材料与光电器件    2.宽禁带半导体材料与器件

电子邮箱 szhang@gzhu.edu.cn

所在系所 物理与电子工程学院

办公地点 理学实验楼203

 

 

 

个人简介

教育经历

1.2010/09 2015/07 :北京大学, 物理学院凝聚态物理专业,博士(直接攻读博士学位),

2. 2006/092010/07 :南京大学,物理系微电子专业,本科

工作经历

1.2015/08 -至今 :广州大学,物理与电子工程学院,讲师

 

在半导体材料生长与器件制备方面拥有8年的研究经验,主攻方向为新型半导体材料与器件。

 

担任主要课程

本科生课程:大学物理、大学物理实验

 

主持课题

1. 国家自然科学基金青年基金项目,61604045,应变对薄层过渡金属硫族化合物谷性质的影响,2017/01-2019/1219万元,在研,主持;

2. 广州大学新进“优秀青年博士”培养计划,应变对薄层过渡金属硫族化合物谷性质的影响,2017/01-2019/1219万元,在研,主持;

 

参与课题

1. 国家自然科学基金面上项目,61574006,薄层过渡金属硫族化合物自旋和谷性质的研究,2016/01-2019/1268万元,在研,参加;

2. 国家自然科学基金青年基金项目,61504005AlGaN深紫外发光材料的偏振特性研究,2016/01-2016/12, 8万元,已结题,参加;

3. 国家自然科学基金面上项目,61376095,应变对CaN基半导体异质结构输运和自旋性质的影响,2014/01-2017/1280万元,已结题,参加

4. 国家自然科学基金面上项目,11174008III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控,2011/01-2014/1275万元,已结题,参加。

 

主要论文

1.        Shan Zhang, Ning Tang, Weifeng Jin, Junxi Duan, Xin He, Xin Rong, Chenguang He, Lisheng Zhang, Xudong Qin, Liping You, Lun Dai, Yonghai Chen, Weikun Ge, and Bo ShenGerneration of Rashba Spin-orbit coupling in CdSe Nanowire by ionic liquid gateNano letters 2015 15, 1152.

2.        Fuhong Mei, Shan Zhang, Ning Tang, Junxi Duan, Fujun Xu, Yonghai Chen, Weikun Ge, Bo Shen, Spin transport study in Rashba spin-orbit coupling system, Scientific reports 2014, 4, 4030 (共同第一作者).

3.        Ning Tang, Shan Zhang, Junxi Duan, Xin He, Lun DaiWeiKun Ge, Bo Shen, Circular Photogalvanic effect in CdSe Nanowires at Room Temperature, 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS), 2016.

4.        Chenguang He, Wei Zhao, Kang Zhang, Longfei He, Hualong Wu, Ningyang Liu, Shan Zhang, Xiaoyan Liu and Zhitao Chen. "High-Quality Gan Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered Ain/Pss Templates." Acs Applied Materials & Interfaces 9, no. 49 (2017): 43386-43392.

5.        Chenguang He, Zhixin Qin, Fujun Xu, Lisheng Zhang, Jiaming Wang, Mengjun Hou, Shan Zhang, Xinqiang Wang, Weikun Ge and Bo Shen. "Effect of Stress on the Al Composition Evolution in Algan Grown Using Metal Organic Vapor Phase Epitaxy." Applied Physics Express 9, no. 5 (2016).

6.        Chenguang He, Zhixin Qin, Fujun Xu, Lisheng Zhang, Jiaming Wang, Mengjun Hou, Shan Zhang, Xinqiang Wang, Weikun Ge and Bo Shen. "Mechanism of Stress-Driven Composition Evolution During Hetero-Epitaxy in a Ternary Algan System." Scientific Reports 6, (2016).

7.        Chenguang He, Zhixin Qin, Fujun Xu, Lisheng Zhang, Mingxing Wang, Mengjun Hou, Weiwei Guo, Shan Zhang, Xinqiang Wang and Bo Shen. "Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd." Materials Letters 176, (2016): 298-300.

8.        Chenguang He, Zhixin Qin, Fujun Xu, Mengjun Hou, Shan Zhang, Lisheng Zhang, Xinqiang Wang, Weikun Ge, and Bo Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers”, Scientific Reports 5, 13046 (2015)

9.        Junxi Duan, Ning Tang, Xin He, Yuan Yan, Shan Zhang, Xudong Qin, Xinqiang Wang, Xuelin Yang, Fujun Xu, Yonghai Chen, Weikun Ge, Bo Shen, Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid, Scientific reports 2014, 4, 4889 (2014).

10.      Chunming Yin, Hongtao Yuan, Xinqiang Wang, Shitao Liu, Shan Zhang, Ning Tang, Fujun Xu, Zhuoyu Chen, Shimotani Hidekazu, Iwasa Yoshihiro, Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN, Nano letters 2013,13, 2024-2029.

11.     唐宁,段俊熙, 张姗, 许福军, 王新强, 沈波, III族氮化物半导体异质结构中载流子的量子输运和自旋性质》, 《中国科学:物理学 力学 天文学》2013, 10: 1176-87

12.      Fuhong Mei, Ning Tang, Xinqiang Wang, Junxi Duan, Shan Zhang, Yonghai Chen, Weikun Ge ,Bo Shen, Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films, Applied physics letters 2012, 101: 13,132404.

13.      Chunming Yin,, Ning Tang, Shan Zhang,Junxi Duan, Fujun Xu, Jie Song, Fuhong Mei, Xinqiang Wang, Bo Shen, Yonghai Chen, Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures, Applied physics letters 2011, 98: 12,122104.

 

 

 

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