郑仁奎
2024-01-29 13:31 郑仁奎 

   郑仁奎 教授

  教育背景:   博士

  研究领域 :  材料物理

  研究方向 :  宽禁带半导体材料、量子材料

  电子邮箱:zrk@gzhu.edu.cn

  所在系所:材料科学与工程系

 

 

个人简介

 2003年在中国科学技术大学获得物理学博士学位,随后在香港理工大学和德国马普固体研究所任博士后和洪堡学者。2011年加入中国科学院上海硅酸盐研究所,先后任副研究员和研究员。2017年加入南昌大学物理与材料学院任教授。目前为广州大学物理与材料科学学院教授,从事宽禁带半导体材料和量子材料的研究。在Physical Review B, npj Quantum Materials, Applied Physics Letters等期刊上发表学术论文100余篇。主持和参与国家自然科学基金等项目多项,已培养10名博士研究生和20余名硕士研究生。承担《大学物理》、《材料物理性能》和《新能源材料与技术》课程的教学工作。

 

发表论文

1.       Zhao-Cai Wang, Lei Chen, Weiyao Zhao*, Shuang-Shuang Li, Ying Zhang, Jing-Shi Ying, Shu-Juan Zhang, Fu-Sheng Luo, Ting-Wei Chen, Mao Ye, Lang Chen, Dan-Feng Li, David Cortie, Julie Karel, Kirrily Rule, Xiaolin Wang, Ji-Yan Dai, and Ren-Kui Zheng*, High valley-degeneracy electron gas at double perovskite - strontium titanate interface, Communications Physics 7, 106 (2024). https://doi.org/10.1038/s42005-024-01597-7

2.       Zhao-Cai Wang, Zheng-Nan Li, Mao Ye, Weiyao Zhao, and Ren-Kui Zheng*, High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO3/SrTiO3 (110) heterostructures, APL Materials 12, 031107 (2024). https://doi.org/10.1063/5.0198762

3.       Zhao-Cai Wang, Zheng-Nan Li, Shuang-Shuang Li, Weiyao Zhao, and Ren-Kui Zheng*, High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO3/SrTiO3 (110) heterostructures, Frontiers of Physics 19, 53203 (2024). https://doi.org/10.1007/s11467-024-1395-6

4.       Chen Li, Bao-Lin Lu, Chen-Long Huang, Hao-Bo Lin, Zheng-Nan Li, Yuan-Hang Ren, N.Z. Khan, Ren-Kui Zheng*, Tremendous enhancement of green emission from Er3+/In3+ co-doped β-Ga2O3 ultrawide bandgap semiconductors, Ceramics International 50, 1683 (2024).  https://doi.org/10.1016/j.ceramint.2023.10.263

5.       Ting-Wei Chen, Shiqi Liu, Ying Zhang, Fang Tang, Jing-Shi Ying, Shuang-Shuang Li, Lei Chen, Fu-Sheng Luo, Shu-Juan Zhang, Yong Fang, Shanming Ke, Weiyao Zhao*, and Ren-Kui Zheng*, Magnetotransport, spin reorientation, and anomalous ferrimagnetic-to-antiferromagnetic phase transition in epitaxial Mn2Sb alloy thin films, Acta Materialia 259, 119257 (2023).  https://doi.org/10.1016/j.actamat.2023.119257

6.       Lei Guo, Weiyao Zhao*, Qi-Le Li, Meng Xu, Lei Chen, Abdulhakim Bake, Thi-Hai-Yen Vu, Yahua He, Yong Fang, David Cortie, Sung-Kwan Mo, Mark T. Edmonds, Xiaolin Wang, Shuai Dong, Julie Karel, and Ren-Kui Zheng*, Antiferromagnetic topological insulating state in Tb0.02Bi1.08Sb0.9Te2S single crystals, Physical Review B 107, 125125 (2023). https://doi.org/10.1103/PhysRevB.107.125125

7.       Ming-Yuan Yan, Shuang-Shuang Li, Jian-Min Yan, Li Xie, Meng Xu, Lei Guo, Shu-Juan Zhang, Guan-Yin Gao, Fei-Fei Wang, Shan-Tao Zhang, Xiaolin Wang, Yang Chai, Weiyao Zhao*, and Ren-Kui Zheng*, Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide, Physical Review Applied 18, 044073 (2022). https://doi.org/10.1103/PhysRevApplied.18.044073

8.       Jian-Min Yan, Jing-Shi Ying, Ming-Yuan Yan, Zhao-Cai Wang, Shuang-Shuang Li, Ting-Wei Chen, Guan-Yin Gao, Fuyou Liao, Hao-Su Luo, Tao Zhang*, Yang Chai*, and Ren-Kui Zheng*, Optoelectronic Coincidence Detection with 2D Bi2O2Se Ferroelectric Field-Effect Transistors, Advanced Functional Materials 31, 2103982 (2021). https://doi.org/10.1002/adfm.202103982

9.       Meng Xu, Ting-Wei Chen, Jian-Min Yan, Lei Guo, Hui Wang, Guan-Yin Gao*, Hao-Su, Luo, Yang Chai, and Ren-Kui Zheng*, Tunable magnetoresistance and charge carrier density in Cr:In2O3/Pb(Mg1/3Nb2/3)-PbTiO3 ferroelectric field effect devices, Physical Review Applied 13, 064006 (2020). https://doi.org/10.1103/PhysRevApplied.13.064006

10.    Xu-Wen Zhao, Si-Ning Dong, Guan-Yin Gao, Zhi-Xue Xu, Meng Xu, Jian-Min Yan, Wei-Yao Zhao, Yu-Kuai Liu*, Shu-Ying Yan, Jin-Xing Zhang, Yu Wang*, Hai-Zhou Lu, Xiao-Guang Li, J. K. Furdyna, Hao-Su Luo, and Ren-Kui Zheng*, Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching, npj Quantum Materials 3, 52(2018). https://doi.org/10.1038/s41535-018-0125-0


 

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