蔡畅，博士，副教授
邮箱：caichang@gzhu.edu.cn
办公室：行政西前座548
蔡畅，博士，副教授，2021年7月至复旦大学从事科研工作。2024年加入广州大学物理与材料科学学院。主要研究纳米器件的辐射效应、高可靠集成电路与系统设计、可编程器件的软件防护技术、元器件地面辐照与星载实验等。近五年，发表第一或通讯作者论文三十余篇；申请发明专利十余项；近三年，作为项目或课题负责人主持国家级、省部级等科研任务。参与教育部新一代集成电路技术集成攻关大平台-亿门级FPGA产品项目建设；参与高可靠数字芯片研发相关ZF、XP、预研等课题。
▍课程
半导体器件、数字集成电路设计、系统级可编程芯片设计
▍主持课题
国家工业和信息化部高质量发展专项 2022-2024
国家自然科学基金青年基金 2023-2025
GF XXX基金 2022-2024
华为技术有限公司技术研发项目 2022-2024
上海复旦微电子集团股份有限公司技术研发项目 2023-2025
中国空间技术研究院技术研发项目 2023-2024
复旦大学人才项目 2021-2022
▍主要论文
1. Chang Cai, Tianqi Liu, Peixiong Zhao, Xue Fan, Hongyang Huang, Dongqing Li, Lingyun Ke, Ze He, Liewei Xu, Gengsheng Chen, and Jie Liu. Multiple Layout-Hardening Comparation of SEU Mitigated Filp-Flops in 22 nm UTBB FD-SOI Technology, IEEE Transactions on Nuclear Science, vol. 67, no. 1, pp. 374-381, Jan. 2020.
2. Chang Cai, Peixiong Zhao, Liewei Xu, Tianqi Liu, Dongqing Li, Lingyun Ke, Ze He, Jie Liu. SEU Tolerance Improvement in SRAM Based on a Simple 8T Hardened Cell, Microelectronics Reliability. 100–101 (2019) 113322.
3. Chang Cai, Tianqi Liu, Xiaoyuan Li, Jie Liu, Zhangang Zhang, Chao Geng, Peixiong Zhao, Dongqing Li, Bing Ye, Qinggang Ji, Lihua Mo. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs, Nucl. Sci. Tech. 2019, 30:80.
4. Chang Cai, Bingxu Ning, Xue Fan, Tianqi Liu, Lingyun Ke, Gengsheng Chen, Jian Yu, Ze He, Liewei Xu, and Jie Liu. SEU Sensitivity and Large Spacing TMR Efficiency of Kintex-7 and Virtex-7 FPGAs. Science China Information Sciences. Vol. 65 129402, 2022.
5. Chang Cai, Yuzhu Liu, Minchi Hu, Gengsheng Chen and Jun Yu, Characterization of LDO Induced Increment of SEE Sensitivity for 22 nm FDSOI SRAM, IEEE Trans. Device Mater. Reliab., 2023, 23(4): 537-543.
6. Chang Cai, Ze He, Tianqi Liu, Gengsheng Chen, Jian Yu, Liewei Xu, Jie Liu. Characterization of Heavy Ion Induced SET Features in 22 nm FD-SOI Testing Circuits. IEEE Access. vol. 8, pp. 45378-45389, 2020.
7. Chang Cai, Tianqi Liu, Jie Liu, Gengsheng Chen, Luchang Ding, Kai Zhao, Bingxu Ning, and Mingjie Shen, Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs, IEEE International Reliability Physics Symposium (IRPS), 2020, pp. 1-5.
8. Chang Cai, Luchang Ding, Ze He, Jian Yu, Jie Liu, Jiyuan Bai, Gengsheng Chen, Jun Yu. Simulation of SEU Response of Advanced 20 nm FDSOI SRAMs, IEEE ASICON, 2021, pp. 1-4.
9. Chang Cai, Zehao Wu, Jing Zhang, Luchang Ding, Lei Shen, Jun Yu, Yaqing Chi, "Implementation of Radiation Hardened Flip-Flops Based on Novel Fishbone Layouts," IEEE International Symposium on Circuits and Systems (ISCAS), 2022, pp. 2286-2289.
10. Chang Cai, Kai Zhao, Jian Yu, Gengsheng Chen, Mingjie Shen, Bingxu Ning, Jun Yu, Characterization of Reliabilities of 22 nm UTBB FDSOI Ring Oscillators. IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2022, pp. 1-3.
